The GS-065-060-3-T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-3-T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

• 650 V enhancement mode power transistor
• Top-cooled, low inductance GaNPX package
• RDS(on) = 25 mOhm
• IDS(max) = 60 A
• Simple gate drive Requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse conduction capability
• Zero reverse recovery loss
• Small 9.2 x 7.8 mm2 footprint
• Dual gate pads for optimal board layout
• RoHS 3 (6+4) compliant

• AC-DC Converters
• DC-DC Converters
• Bridgeless Totem Pole PFC
• Inverters
• Energy Storage Systems
• On Board Chargers
• Uninterruptable Power Supplies
• Solar Energy
• Industrial Motor Drives
• Laser Drivers
• Traction Drive
• Wireless Power Transfer