2DD180407C

2DDxxxxxxC series are insulated DC/DC converters for gate drivers such as SiC MOSFET and IGBT. The high breakdown voltage and low parasitic capacitance make it suitable for gate drives such as SiC MOSFET and IGBT.

• Ideal for gate drive power supply
• Ideal for half-bridge operation by dual output
• Gate voltage: +18V/-4V
• Low parasitic capacitance (about 9 pF); highly resistant to common-mode noise.
• Input-to-Output dielectric withstand voltage : AC5000V
• Output-to-Output dielectric withstand voltage : AC4000V
• Input-to-Output insulation distance : 14mm (clearance creepage）
• Output-to-Output insulation distance : 12mm (clearance creepage）
• Input voltage : 13.5 to 26.4V
• Over load protection
• Over heat protection
• Filling structure
• Safety standards：UL508(file no.E243511)

Inverters for industrial equipment, power conditioners, etc.