APT100GN120B2G

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APT100GN120B2G Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: APT100GN120B2G
Richardson RFPD #: APT100GN120B2G
Description: Power IGBT Transistor
Min/Mult: 30/1
Datasheet APT100GN120B2G Data Sheet
EDA/CAD Models

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.

Key Attributes Value Search Similar
Configuration Single
Voltage (V) 1200
Current (A) 245
Package Type T-Max™

Change Notice

  Microchip Change Notice ASER-08CMEO630

Datasheets

  apt100gn120b2(g)_a

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Unit Price:
30:  $26.2800
50:  $25.5900
100:  $25.2700
250:  Get Quote


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