APT100GN60LDQ4G

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APT100GN60LDQ4G Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: APT100GN60LDQ4G
Richardson RFPD #: APT100GN60LDQ4G
Description: Power IGBT Transistor
Min/Mult: 40/1
Datasheet APT100GN60LDQ4G Data Sheet
EDA/CAD Models

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.

Key Attributes Value Search Similar
Configuration IGBT + Diode
Voltage (V) 600
Current (A) 229
Package Type TO-264

Change Notice

  PCN_JAON-21SZYY684

  Microchip Change Notice ASER-08CMEO630

Datasheets

  100gn60ldq4_g_a Datasheets

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 Pricing in (USD)
Unit Price:
40:  $13.3400
50:  $12.9900
100:  $12.8200
250:  Get Quote


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