CGH09120F

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CGH09120F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH09120F
Richardson RFPD #: CGH09120F
Description: RF Power Transistor
Min/Mult: 40/1
Datasheet CGH09120F Data Sheet
EDA/CAD Models

CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 300
Maximum Frequency (MHz) 2500
Pout (W) 20
Gain (dB) 21.5
Supply Voltage (V) 28
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 35
P1dB (W)
Psat (W) 120
Thermal Resistance (°C/W) 1.7
Package Name
Package Type Ceramic Flanged

Datasheets

  cgh09120f

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