INN150FQ032A

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INN150FQ032A Innoscience
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Innoscience
Mfg #: INN150FQ032A
Richardson RFPD #: INN150FQ032A
Description: GaN Power Transistor
Min/Mult: 2,500/1
Datasheet INN150FQ032A Data Sheet
EDA/CAD Models

Currently not available for sale in the U.S.

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4 mm x 6 mm package size

Features

  • GaN-on-Silicon E-mode HEMT technology
  • Industry Application
  • Very low gate charge
  • Ultra-low on resistance
  • Very small footprint

Applications

  • High frequency DC-DC converter
  • Solar Systems optimizers and microinverters
  • PD Charger and PSU Synchronous Rectification
  • Telecom Power Supply
  • Motor driver

Key Attributes Value Search Similar
Voltage (V) 150
Current (A) 100
Rds(on) (mΩ) 3.2
Package Type FCQFN
Dimensions (mm) 4 mm x 6 mm

Datasheets

  INN150FQ032A

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