K100N50X4B

Stock Availability: 550

K100N50X4B TTM Technologies
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: TTM Technologies
Mfg #: K100N50X4B
Richardson RFPD #: K100N50X4B
Description: RF Termination
Min/Mult: 1,000/1
Datasheet K100N50X4B Data Sheet
EDA/CAD Models

Half Flange Termination 100 Watts, 50 Ohms. The K100N50X4B is high performance Aluminum Nitride (AlN) half flange termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling makes the part ideal for terminating circulators, and for use in power combiners. The termination is also RoHS compliant!


Key Attributes Value Search Similar
Type Flange Mount
Resistive Element Thick Film
Substrate AlN
Resistance (Ω) 50
Power (W) 100
Dimensions (in/mm) 0.515 in L x 0.25 in W
Maximum Frequency (GHz) 4
VSWR (-:1) 1.11

Datasheets

  K100N50X4B

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 Ready for Immediate Shipment
Stock: 550 Units

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 Pricing in (USD)
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1000:  $3.9800
5000:  Get Quote