MRFE6VP5600HSR5

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Manufacturer: NXP Semiconductors
Mfg #: MRFE6VP5600HSR5
Richardson RFPD #: MRFE6VP5600HSR5
Description: RF Power Transistor
Datasheet MRFE6VP5600HSR5 Data Sheet
EDA/CAD Models

The MRFE6VP5600HSR5 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation, high gain, high efficiency, very low thermal resistance and very st

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 600
Gain (dB) 24.6
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 75.2
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.12
Package Name NI-1230
Package Type Ceramic Flangeless

Change Notice

  NXP_PCN_202504008I

  NXP_PCN_202512006DN

  NXP_PCN_202512006DNU01

Datasheets

  MRFE6VP5600H

White Papers

  Freescale 50VRFLDMOSWP White Paper

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