MSCSICSP3/REF2

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MSCSICSP3/REF2 Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCSICSP3/REF2
Richardson RFPD #: MSCSICSP3/REF2
Description: Silicon Carbide Test/Evaluation Products
Min/Mult: 1
Datasheet MSCSICSP3/REF2 Data Sheet
EDA/CAD Models

SiC SP3 Module Driver Reference Design

The MSCSICSP3/REF2 reference design provides an example of a highly isolated SiC MOSFET dual-gate driver for the SiC SP3 phase leg modules. It can be configured by switches to drive in a half bridge configuration with only side on at any time and with dead time protection. It can also be configured to provide concurrent drive, if necessary. This design is intended for use with Microsemi SiC SP3 modules.

Key features of this half-bridge module driver solution compatible with SP3F standard modules:

  • 400 kHz maximum switching frequency
  • 16 W of gate drive power per side
  • 30 A peak output current
  • -5 V/+20 V gate drive voltage
  • +/-100 kV/us capability
  • Galvanic isolation of more than 2000 V on both gate drivers

Key Attributes Value Search Similar
Description SiC SP3 Module Driver Reference Design

Application Notes

  Microsemi Design Recommendations for SiC MOSFET

Brochure

  Microchip Silicon Carbide Power Semiconductor Brochure

Datasheets

  MSCSICSP3-REF2

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