0912GN-250V


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Manufacturer: Microchip
Mfg #: 0912GN-250V
Richardson RFPD #: 0912GN-250V
Description: RF Power Transistor
Min/Mult: 1
Datasheet 0912GN-250V Data Sheet
EDA/CAD Models

The 0912GN-250V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 250 Watts of pulsed RF output power at 128 us pulse width, 10% duty factor across the 960 to 1215 MHz band. The transistor has internal pre-match for optimal performance. This transistor can be used for broadband avionics data link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 960
Maximum Frequency (MHz) 1215
Pout (W) 250
Gain (dB) 18.5
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 60
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.23
Package Name
Package Type Ceramic Flanged

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