0912GN-650V


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: 0912GN-650V
Richardson RFPD #: 0912GN-650V
Description: RF Power Transistor
Min/Mult: 1
Datasheet 0912GN-650V Data Sheet
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The 0912GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 128μs pulse width, 10% duty factor across the 960 to 1215 MHz band. The transistor has internal prematch for optimal performance. This hermetically sealed transistor can be used for Broadband Avionics Data Link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 960
Maximum Frequency (MHz) 1215
Pout (W) 650
Gain (dB) 18
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 53
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.155
Package Name 55KR
Package Type Ceramic Flanged

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