1011GN-2200VP


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Manufacturer: Microchip
Mfg #: 1011GN-2200VP
Richardson RFPD #: 1011GN-2200VP
Description: RF Power Amplifier Pallet
Min/Mult: 1
Datasheet 1011GN-2200VP Data Sheet
EDA/CAD Models

The 1030/1090MHz, 50V, 1011GN-2200VP is a state of the art internally matched to 50 Ohm plug and play pallet, common source, class AB, GaN on SiC HEMT that capable of providing greater than 2200 Watts of pulsed output power with over 19.4 dB gain and greater than 70% drain efficiency at both 32us pulse width, 2% duty cycle, Mode-S ELM, and IFF pulse formats. The pallet incorporates internally pre-matched transistors for optimal performance and utilizes gold metallization and eutectic die attach to provide highest reliability and superior ruggedness. Best Size, Weight, and Power (SWaP) output stage designs can be achieved by taking advantage of this small footprint pallet with dual gate and drain bias feeds combined with the benefits of two single-ended industry standard earless 1011GN-1200VEL transistors which are capable of handling the same pulsing formats as the 1011GN- 2200VP, all in a very small footprint 2.0" x 3.4" 50 Ohm INPUT/OUTPUT Plug and- Play Pallet.


Key Attributes Value Search Similar
Minimum Frequency (MHz) 1030
Maximum Frequency (MHz) 1090
P1dB (W) 2200
Gain (dB) 19.4
Gain Flatness (dB)
Supply Voltage (V) 50
Dimensions (in) 2.0" W x 3.4" W x 0.175" T

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