2CG010BBC13N
Stock Availability: 0
| Manufacturer: | Tamura |
|---|---|
| Mfg #: | 2CG010BBC13N |
| Richardson RFPD #: | 2CG010BBC13N |
| Description: | Gate Driver |
| Min/Mult: | 120/1 |
| Datasheet |
2CG010BBC13N 
|
| EDA/CAD Models |
|
Overview
Gate driver 2CG010BBC13N is a dual channel gate driver designed for IGBT and SiC MOSFET. The high breakdown voltage and low parasitic capacitance make it suitable for gate drives such as SiC MOSFET and IGBT.
Features- Ideal for drive of IGBT and SiC MOSFET
- Gate voltage : +18V/-4V
- ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit)
- Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise
- Fast response : about 100nsec(typ)
- Industrial inverter, power conditioner
Datasheets
Supplier Documentation
Please notify me when stock becomes available!