2DMB80206CC

Gate driver 2DMBxxxxxCC is a dual channel gate driver designed for IGBT and SiC MOSFET. The high breakdown voltage and low parasitic capacitance make it suitable for gate drives such as SiC MOSFET and IGBT.

• Ideal for drive of IGBT and SiC MOSFET
• Gate voltage : +18V/-2V
• ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit)
• Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise
• Fast response : about 100nsec(typ)
• The gate drive circuit used a isolator
• Input-to-Output dielectric withstand voltage : AC5000V
• Output CH1-to-Ouput CH2 dielectric withstand voltage : AC4000V
• Input-to-Output insulation distance : 14mm (clearance creepage）
• Output CH1-to-Output CH2 insulation distance : 7mm (clearance), 12mm(creepage）
• DC/DC converter input voltage :13 to 28V
• Signal input voltage : 3.3V,5V
• Overload protection (DC/DC converter)
• Overheat protection (DC/DC converter)
• Half bridge mode (Gate drive circuit)
• Desaturation protection (Gate drive circuit)
• Soft turn-off function (Gate drive circuit)
• Fault signal output function (Gate drive circuit)
• Miller clamp function (Gate drive circuit)
• Under-voltage lockout(UVLO) (Gate drive circuit)
• Safety standards : UL508 (certification pending)

Industrial inverter, power conditioner, etc