A150N50X4C


Stock Availability: 0

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: TTM Technologies
Mfg #: A150N50X4C
Richardson RFPD #: A150N50X4C
Description: RF Termination
Min/Mult: 1,000/1
Datasheet A150N50X4C Data Sheet
EDA/CAD Models

The A150N50X4C is high performance Aluminum Nitride (AlN) chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination dissipates 150W and has a return loss of 25dB to 3GHz. It is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling makes the part ideal for terminating circulators, and for use in power combiners. The termination is also RoHS compliant!


Key Attributes Value Search Similar
Type Chip
Resistive Element Thick Film
Substrate AlN
Resistance (Ω) 50
Power (W) 150
Dimensions (in/mm) 0.35 in L x 0.225 in W x 0.04 in T
Maximum Frequency (GHz) 3
VSWR (-:1) 1.12

Datasheets

Stock

Request Quote for Lead Time

Quote Required



Please notify me when stock becomes available!