A2I09VD050GNR1

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A2I09VD050GNR1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A2I09VD050GNR1
Richardson RFPD #: A2I09VD050GNR1
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet A2I09VD050GNR1 Data Sheet
EDA/CAD Models

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 575
Maximum Frequency (MHz) 960
Gain (dB) 36.5
Gain Flatness (dB)
Efficiency (%) 19.8
Supply Voltage (V) 48
P1dB (dBm) 47.3
Psat (W)
PAvg (W) 6.3
Package Type Plastic

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202512006DN

Datasheets

  A2I09VD050N

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Unit Price: Pricing in (USD)
1:  $34.0000


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