A2I09VD050NR1


Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A2I09VD050NR1
Richardson RFPD #: A2I09VD050NR1
Description: RF & MW Power Amplifier
Min/Mult: 500/500
Datasheet A2I09VD050NR1 Data Sheet
EDA/CAD Models

The A2I09VD050N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 575
Maximum Frequency (MHz) 960
Gain (dB) 36.5
Gain Flatness (dB) 0.3
Efficiency (%) 19.8
Supply Voltage (V) 48
P1dB (dBm) 53.7
Psat (W) 67.6
PAvg (W) 6.3
Package Type Surface Mount

Full Reel

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Unit Price: Pricing in (USD)
500:  $32.8300

Must order in multiple of 500

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Unit Price: Pricing in (USD)
500:  $33.6400