A2I20D020GNR1

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A2I20D020GNR1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A2I20D020GNR1
Richardson RFPD #: A2I20D020GNR1
Description: RF & MW Power Amplifier
Min/Mult: 500/1
Datasheet A2I20D020GNR1 Data Sheet
EDA/CAD Models

The A2I20D020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1400
Maximum Frequency (MHz) 2200
Gain (dB) 31
Gain Flatness (dB) 1
Efficiency (%) 21.2
Supply Voltage (V) 28
P1dB (dBm) 42.04
Psat (W)
PAvg (W)
Package Type Plastic

Change Notice

  NXP_PCN_202504006I

Datasheets

  A2I20D020N

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1:  $81.4000


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