A2T09D400-23NR6

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A2T09D400-23NR6 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A2T09D400-23NR6
Richardson RFPD #: A2T09D400-23NR6
Description: RF Power Transistor
Datasheet A2T09D400-23NR6 Data Sheet
EDA/CAD Models

This 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 716
Maximum Frequency (MHz) 960
Pout (W) 93
Gain (dB) 17.8
Supply Voltage (V) 28
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 45.9
P1dB (W) 400
Psat (W) 540
Thermal Resistance (°C/W) 0.29
Package Name OM-1230-4L2S
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202512006DN

  NXP_PCN_202512006DNU01

Datasheets

  A2T09D400-23N

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