A2V09H525-04NR6

A2V09H525-04NR6 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A2V09H525-04NR6
Richardson RFPD #: A2V09H525-04NR6
Description: RF Power Transistor
Min/Mult: 150/150
Datasheet A2V09H525-04NR6 Data Sheet
EDA/CAD Models

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 720
Maximum Frequency (MHz) 960
Pout (W) 120
Gain (dB) 18.9
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 56.7
P1dB (W)
Psat (W) 759
Thermal Resistance (°C/W) 0.23
Package Name OM-1230-4L
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202512006DN

  NXP_PCN_202512006DNU01

Datasheets

  A2V09H525-04N

Full Reel

 Request Quote for Lead Time
Unit Price: Pricing in (USD)
150:  $171.7600

Must order in multiple of 150

Cut Tape

 Request Quote for Lead Time
Unit Price: Pricing in (USD)
150:  $176.0200