A3I20X050GNR1

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A3I20X050GNR1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A3I20X050GNR1
Richardson RFPD #: A3I20X050GNR1
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet A3I20X050GNR1 Data Sheet
EDA/CAD Models

The A3I20X050GN integrated Doherty circuit is designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1800
Maximum Frequency (MHz) 2200
Gain (dB) 29.3
Gain Flatness (dB) 0.3
Efficiency (%) 39.5
Supply Voltage (V) 28
P1dB (dBm)
Psat (W) 63
PAvg (W) 6.3
Package Type Surface Mount

Change Notice

  NXP_PCN_202502018A

  NXP_PCN_202504006I

Datasheets

  A3I20X050N Datasheet

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 Pricing in (USD)
Unit Price:
1:  $218.2000
10:  $208.8500
25:  $203.0400
50:  $197.0200
100:  Get Quote


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