A3I25D080NR1

Stock Availability: 45

A3I25D080NR1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A3I25D080NR1
Richardson RFPD #: A3I25D080NR1
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet A3I25D080NR1 Data Sheet
EDA/CAD Models

The A3I25D080N integrated Doherty circuit is designed with on chip matching that makes it usable from 2300 to 2690 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 2300
Maximum Frequency (MHz) 2690
Gain (dB) 29.2
Gain Flatness (dB) 0.3
Efficiency (%) 35.6
Supply Voltage (V) 28
P1dB (dBm)
Psat (W) 85
PAvg (W) 8.3
Package Type Surface Mount

Change Notice

  NXP_PCN_202504006I

Datasheets

  A3I25D080N

Stock

 Ready for Immediate Shipment
Stock: 45 Units

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 Pricing in (USD)
Unit Price:
1:  $119.7800
10:  $114.6500
25:  $111.4700
50:  $108.1600
100:  Get Quote