A3M34TL139T2

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A3M34TL139T2 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A3M34TL139T2
Richardson RFPD #: A3M34TL139T2
Description: RF & MW Power Amplifier
Min/Mult: 2,000/1
Datasheet A3M34TL139T2 Data Sheet
EDA/CAD Models

The A3M34TL139 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 3300
Maximum Frequency (MHz) 3580
Gain (dB) 28.2
Gain Flatness (dB) 0.5
Efficiency (%) 39.3
Supply Voltage (V) 27
P1dB (dBm)
Psat (W) 55
PAvg (W) 7
Package Type Surface Mount

Change Notice

  NXP_PCN_202504006I

Datasheets

  A3M34TL139

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