A5G23H110NT4

Stock Availability: 0

A5G23H110NT4 NXP Semiconductors
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5G23H110NT4
Richardson RFPD #: A5G23H110NT4
Description: RF Power Transistor
Min/Mult: 2,500/1
Datasheet A5G23H110NT4 Data Sheet
EDA/CAD Models

Disclaimer: Please note this is pre-release and the part is subject to change

This 13.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. This part is characterized and performance is guaranteed for applications operating in the 2300 to 2400 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2300
Maximum Frequency (MHz) 2400
Pout (W) 13.8
Gain (dB) 16.1
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 56.5
P1dB (W)
Psat (W) 92
Thermal Resistance (°C/W) 5.9
Package Name DFN7x6.5
Package Type Plastic SMT

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202502008F01

Datasheets

  A5G23H110NT4

Stock

 Request Quote for Lead Time

Order

 Pricing in (USD)
Unit Price:
1:  $135.3700


Please notify me when stock becomes available!