A5G26H606W19NR3

Stock Availability: 0

A5G26H606W19NR3 NXP Semiconductors
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5G26H606W19NR3
Richardson RFPD #: A5G26H606W19NR3
Description: RF Power Transistor
Datasheet A5G26H606W19NR3 Data Sheet
EDA/CAD Models

Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2496
Maximum Frequency (MHz) 2690
Pout (W) 85
Gain (dB) 13.7
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 51.5
P1dB (W)
Psat (W) 446.68
Thermal Resistance (°C/W) 1
Package Name OM-780-4S4S
Package Type Plastic

Change Notice

  NXP_PCN_202512006DN

Datasheets

  A5G26H606W19N

Stock

 Request Quote for Lead Time
Min/Mult: 250/1

Quote Required


Please notify me when stock becomes available!