A5G26S008NT6

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A5G26S008NT6 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5G26S008NT6
Richardson RFPD #: A5G26S008NT6
Description: RF Power Transistor
Min/Mult: 5,000/1
Datasheet A5G26S008NT6 Data Sheet
EDA/CAD Models

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2496
Maximum Frequency (MHz) 2690
Pout (W) 0.5
Gain (dB) 19
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 16
P1dB (W)
Psat (W) 10.7
Thermal Resistance (°C/W) 7.3
Package Name DFN4.5x4
Package Type Plastic SMT

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202502008F01

Datasheets

  A5G26S008N

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