A5G35H110NT4

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A5G35H110NT4 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5G35H110NT4
Richardson RFPD #: A5G35H110NT4
Description: RF Power Transistor
Min/Mult: 2,500/1
Datasheet A5G35H110NT4 Data Sheet
EDA/CAD Models

This 15.1 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700 MHz. This part is characterized and performance is guaranteed for applications operating in the 3300 to 3700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3300
Maximum Frequency (MHz) 3700
Pout (W) 15.1
Gain (dB) 15.8
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 54
P1dB (W)
Psat (W) 57.5
Thermal Resistance (°C/W) 2.8
Package Name DFN7x6.5
Package Type Plastic SMT

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202502008F01

Datasheets

  A5G35H110NT4

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1:  $120.7700


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