A5M39TG140T2

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A5M39TG140T2 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5M39TG140T2
Richardson RFPD #: A5M39TG140T2
Description: RF & MW Power Amplifier
Min/Mult: 2,000/1
Datasheet A5M39TG140T2 Data Sheet
EDA/CAD Models

The A5M39TG140 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN-on-SiC power amplifiers are designed for TDD LTE and 5G systems.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3700
Maximum Frequency (MHz) 3980
Gain (dB) 32.2
Gain Flatness (dB) 0.4
Efficiency (%) 46.9
Supply Voltage (V) 48
P1dB (dBm)
Psat (W) 66
PAvg (W) 9
Package Type Surface Mount

Change Notice

  NXP_PCN_202502008F01

Datasheets

  A5M39TG140

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