ADL8106ACEZ-R7


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Manufacturer: Analog Devices, Inc. (ADI)
Mfg #: ADL8106ACEZ-R7
Richardson RFPD #: ADL8106ACEZ-R7
Description: RF & MW LNA
Min/Mult: 1,000/1
Datasheet ADL8106ACEZ-R7 Data Sheet
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The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. All the typically required external passive components for operation (ac coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small and compact printed circuit board (PCB) footprint.

The ADL8106 provides a gain of 21.5 dB, an output power for 1 dB compression (OP1dB) of 14.5 dBm, and a typical output third-order intercept (OIP3) of 21.5 dBm at 30 GHz to 44 GHz. The ADL8106 requires 120 mA from a 3 V supply voltage (VDDx). The ADL8106 is housed in a 5.00 mm x 5.00 mm, 24-terminal chip array small outline no lead cavity (LGA_CAV) package.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 18000
Maximum Frequency (MHz) 54000
Gain (dB) 21.5
Gain Flatness (dB)
Noise Figure (dB) 3.5
P1dB (dBm) 14.5
Output IP3 (dBm) 21.5
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 3
Current (mA) 120
Package Type LGA_CAV

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  ADL8106

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