ADL9005ACPZN

The ADL9005 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband, LNA that operates from 0.01 to 26.5 GHz. The ADL9005 provides a typical gain of 17.5 dB from 0.01 GHz to 14 GHz with a positive gain slope from 14 GHz to 20 GHz, a 13.5 dBm typical output power at 1 dB compression (OP1dB) from 0.01 GHz to 20 GHz, a 2.5 dB typical noise figure from 0.01 GHz to 14 GHz, and a typical output third-order intercept (OIP3) of 26 dBm from 0.01 GHz to 14 GHz, requiring only 80 mA from a 5 V supply voltage. The saturated output power (PSAT) of up to 16 dBm enables the LNA to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, inphase/quadrature (I/Q) or image rejection mixers. The ADL9005 also features inputs and outputs (I/Os) that are internally matched to 50 Ohm, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications. The ADL9005 is housed in a RoHS-compliant, 4 mm x 4 mm, LFCSP.