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Product image for reference only. For precise specifications, refer to datasheet.
The ADL9006 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier provides 15.5 dB of gain, 2.5 dB noise figure, 26 dBm output third-order intercept (OIP3), and 20 dBm of output power for 1 dB compression (P1dB) while requiring 53 mA from a 5 V supply. The ADL9006 is self biased with only a single positive supply needed to achieve a supply current (IDD) of 53 mA. The ADL9006 amplifier input and output are internally matched to 50 Ohm.
ADL9006
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