ADL9006ACGZN-R7


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Analog Devices, Inc. (ADI)
Mfg #: ADL9006ACGZN-R7
Richardson RFPD #: ADL9006ACGZN-R7
Description: RF & MW LNA
Min/Mult: 500/1
Datasheet ADL9006ACGZN-R7 Data Sheet
EDA/CAD Models

The ADL9006 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier provides 15.5 dB of gain, 2.5 dB noise figure, 26 dBm output third-order intercept (OIP3), and 20 dBm of output power for 1 dB compression (P1dB) while requiring 53 mA from a 5 V supply. The ADL9006 is self biased with only a single positive supply needed to achieve a supply current (IDD) of 53 mA. The ADL9006 amplifier input and output are internally matched to 50 Ohm.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 2000
Maximum Frequency (MHz) 28000
Gain (dB) 15.5
Gain Flatness (dB)
Noise Figure (dB) 2.5
P1dB (dBm) 18
Output IP3 (dBm) 23
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 5
Current (mA) 53
Package Type LFCSP

Datasheets

  ADL9006

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