The ADPA7007 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 31.5 dBm saturated output power power amplifier, with an integrated temperature compensated, on-chip power detector that operates between 20 GHz and 44 GHz. The ADPA7007 provides 20.5 dB of small signal gain and approximately 32 dBm of saturated output power at 32 GHz from a 5 V supply. The ADPA7007 has an output IP3 of 42.5 dBm and is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring >30 dBm of efficient saturated output power. The RF input/outputs are internally matched and dc blocked for ease of integration into higher level assemblies. The ADPA7007 is packaged in a 7 mm x 7 mm, 18-terminal ceramic leadless chip carrier with heat sink (LCC_HS) that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.
