ADPA7008AEHZ-R7

The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip power detector that operates from 20 GHz to 54 GHz. The amplifier provides 17.5 dB of small signal gain, an output power for 1 dB compression (P1dB) of 30 dBm with an excellent IP3 of 37 dBm typical from 22 GHz to 40 GHz. The ADPA7008 is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring 31 dBm of efficient PSAT. The ADPA7008 requires 1500 mA from a 5 V supply voltage (VDD). The RF input and outputs are internally matched and dc blocked for ease of integration into higher level assemblies. The ADPA7008 is housed in a 7 mm x 7 mm, ceramic leadless package with heat sink [LCC_HS] that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.