ADPA9002ACGZN-R7

The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10 GHz. The amplifier provides 15 dB of gain, 42 dBm of OIP3, and 31.5 dBm of saturated output power (P_SAT) while requiring 385 mA from a 12 V supply. The ADPA9002 is self biased in normal operation and has an optional bias control for supply quiescent current (I_DQ) adjustment. The amplifier is ideal for military and space and test equipment applications. The ADPA9002 also features inputs and outputs that are internally matched to 50 Ohm, housed in a RoHS compliant, 5 mm × 5 mm LFCSP premolded cavity package, making it compatible with high volume surface-mount technology (SMT) assembly equipment.