AFSC5G26E39T2

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AFSC5G26E39T2 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: AFSC5G26E39T2
Richardson RFPD #: AFSC5G26E39T2
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet AFSC5G26E39T2 Data Sheet
EDA/CAD Models

Second generation mMIMO Power Amplifier Module (PAM) with increased power and efficiency over previous generations. The compact, surface mount device is footprint compatible with the other PAM's, enabling the designer to reuse PCB layouts for multiple bands. The two-stage PAM is designed in a Doherty configuration and internally matched to 50 Ohm on the input and output, simplifying deployment.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 2496
Maximum Frequency (MHz) 2690
Gain (dB) 30
Gain Flatness (dB) 0.5
Efficiency (%) 41
Supply Voltage (V) 28
P1dB (dBm)
Psat (W) 51
PAvg (W) 8
Package Type Surface Mount

Change Notice

  NXP_PCN_202504006I

Datasheets

  AFSC5G26E39

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 Pricing in (USD)
Unit Price:
1:  $95.0600
10:  $90.9900
25:  $88.4600
50:  $85.8400
100:  Get Quote


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