AFT27S012NT1

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AFT27S012NT1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: AFT27S012NT1
Richardson RFPD #: AFT27S012NT1
Description: RF Power Transistor
Min/Mult: 1,000/1
Datasheet AFT27S012NT1 Data Sheet
EDA/CAD Models

This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 728
Maximum Frequency (MHz) 2700
Pout (W) 1.26
Gain (dB) 20.9
Supply Voltage (V) 28
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 22.8
P1dB (W) 13
Psat (W)
Thermal Resistance (°C/W) 3.4
Package Name PLD-1.5W
Package Type Plastic SMT

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202512006DN

Datasheets

  AFT27S012N

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