AFV121KGSR5

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AFV121KGSR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: AFV121KGSR5
Richardson RFPD #: AFV121KGSR5
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet AFV121KGSR5 Data Sheet
EDA/CAD Models

This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. This device is suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 960
Maximum Frequency (MHz) 1215
Pout (W) 1000
Gain (dB) 19.6
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 59.7
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.017
Package Name NI-1230GS-4L
Package Type Ceramic Gull Wing

Change Notice

  NXP_PCN_202504006I

Datasheets

  AFV121KH

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