APT13GP120BDQ1G


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: APT13GP120BDQ1G
Richardson RFPD #: APT13GP120BDQ1G
Description: Power IGBT Transistor
Min/Mult: 80/1
Datasheet APT13GP120BDQ1G Data Sheet
EDA/CAD Models

The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.

Key Attributes Value Search Similar
Configuration IGBT + Diode
Voltage (V) 1200
Current (A) 41
Package Type TO-247

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Unit Price:
80:  $6.0400
100:  $5.9500
250:  Get Quote


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