APT30GP60B2DLG

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APT30GP60B2DLG Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: APT30GP60B2DLG
Richardson RFPD #: APT30GP60B2DLG
Description: Power IGBT Transistor
Min/Mult: 56/1
Datasheet APT30GP60B2DLG Data Sheet
EDA/CAD Models

The Power MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.

Key Attributes Value Search Similar
Configuration IGBT + Diode
Voltage (V) 600
Current (A) 30
Package Type T-Max™

Datasheets

  9125411-apt30gp60b2-ldl-g-c-pdf

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