APT43GA90BD30

Power MOS 8^® is a high speed Punch-Through switch-mode IGBT. Low E_off is achieved through leading technology silicon design and lifetime control processes. A reduced E_off - V_CE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.