APT45GP120B2DQ2G


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: APT45GP120B2DQ2G
Richardson RFPD #: APT45GP120B2DQ2G
Description: Power IGBT Transistor
Min/Mult: 1
Datasheet APT45GP120B2DQ2G Data Sheet
EDA/CAD Models

The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.

Key Attributes Value Search Similar
Configuration IGBT + Diode
Voltage (V) 1200
Current (A) 113
Package Type T-Max™

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Unit Price: Pricing in (USD)
1:  $17.9300

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