APT50GN120B2G

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APT50GN120B2G Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: APT50GN120B2G
Richardson RFPD #: APT50GN120B2G
Description: Power IGBT Transistor
Min/Mult: 50/1
Datasheet APT50GN120B2G Data Sheet
EDA/CAD Models

Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.

Key Attributes Value Search Similar
Configuration Single
Voltage (V) 1200
Current (A) 134
Package Type T-Max™

Change Notice

  Microchip Change Notice ASER-08CMEO630

Datasheets

  15836323-apt50gn120b2-g-c-pdf

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 Pricing in (USD)
Unit Price:
50:  $9.7000
100:  $9.5700
250:  Get Quote


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