APT80GA90B2SC50

Stock Availability: 30

APT80GA90B2SC50 Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: APT80GA90B2SC50
Richardson RFPD #: APT80GA90B2SC50
Description: Silicon Carbide/Silicon Hybrid Modules
Min/Mult: 30/1
Datasheet APT80GA90B2SC50 Data Sheet
EDA/CAD Models

900 V, 80 A Power MOS 8 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, T-MAX

Features

  • Low conduction loss and saturation voltage
  • Low gate charge
  • Ultrafast tail current shutoff
  • No reverse recovery
  • High operating frequency
  • Switching safe operating area (SSOA) rated
  • RoHS compliant
  • Zero Eon switching loss from co-packaged, anti-parallel diode

Key Attributes Value Search Similar
Voltage (V) 900
Current (A) 80
Configuration IGBT/SiC Diode
Package Type TO-247 Max

Datasheets

  APT80GA90B2SC50

Stock

 Ready for Immediate Shipment
Stock: 30 Units

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 Pricing in (USD)
Unit Price:
1:  $16.4000