APTCV40H60CT1G

Features

• Q2, Q4 CoolMOS: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated, Very rugged, Fast intrinsic diode
• Q1, Q3 Trench and Field Stop IGBT: Low voltage drop, Switching frequency up to 20 kHz, RBSOA & SCSOA rated, Low tail current
• SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration

Benefits

• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low Profile
• RoHS compliant

Applications

• Solar converter