APTM120DA30CT1G

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APTM120DA30CT1G Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: APTM120DA30CT1G
Richardson RFPD #: APTM120DA30CT1G
Description: Silicon Carbide/Silicon Hybrid Modules
Min/Mult: 12/1
Datasheet APTM120DA30CT1G Data Sheet
EDA/CAD Models

Features
  • Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • High level of integration
Benefits
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant
Applications
  • AC and DC motor control
  • Switched mode power supplies
  • Power Factor Correction

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 23
Configuration Boost/MOSFET/SiC diode
Package Type SP1

Change Notice

  PCN_GBNG-20QPMG899

  Microchip Change Notice ASER-08CMEO630

Datasheets

  APTM120DA30CT1G

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 Pricing in (USD)
Unit Price:
12:  $78.1900
25:  $76.1700
100:  Get Quote


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