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Product image for reference only. For precise specifications, refer to datasheet.
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
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Applications
CREE-PCN-1343
CREE PCN 1055
Wolfspeed_PCN_00136
Wolfspeed_PCN-00145
Wolfspeed_PCN-00154
C3D06060A
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