C3M0016120K

Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds_(on) SiC MOSFET at 1200V in a discrete package. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Using the separate Kelvin source pin can further reduce switching losses by as much as 30% compared to the traditional 3-lead TO-247 package. Featuring the lowest available on-resistance combined with a low gate charge, the C3M0016120K is ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC/DC converters and chargers.

Features

• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Q_rr)
• Halogen free, RoHS compliant

Benefits

• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency

Applications

• Solar energy systems
• EV-Charging and EV-drive
• Uninterruptible power supply (UPS)
• High voltage DC/DC converters
• Switched mode power supplies
• Load switch
• Motor Control and Drives
• Energy storage