C3M0021120J2-TR

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C3M0021120J2-TR Wolfspeed
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Wolfspeed
Mfg #: C3M0021120J2-TR
Richardson RFPD #: C3M0021120J2-TR
Description: Silicon Carbide MOSFETs
Min/Mult: 800/1
Datasheet C3M0021120J2-TR Data Sheet
EDA/CAD Models

Silicon Carbide Power MOSFET

Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • Larger drain tab for better thermal performance
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Motor Control
  • EV battery chargers
  • High voltage DC/DC converters

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 83
Rds(on) (mΩ) 21
Configuration Single SiC MOSFET
Package Type TO-263-7

Change Notice

  Wolfspeed_PCN_00136

  Wolfspeed_PCN-00145

  Wolfspeed_PCN-00154

Datasheets

  C3M0021120J2

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