C3M0032120K

Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on the reliable 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diodes. The new family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature. Wolfspeed designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Q_rr)
• Halogen free, RoHS compliant

• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency

• Solar inverters
• EV motor drive
• High voltage DC/DC converters
• Switched mode power supplies
• Load switch