C3M0045065J1-TR


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Wolfspeed
Mfg #: C3M0045065J1-TR
Richardson RFPD #: C3M0045065J1-TR
Description: Silicon Carbide MOSFETs
Min/Mult: 800/1
Datasheet C3M0045065J1-TR Data Sheet
EDA/CAD Models

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features
  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency
Applications
  • Datacenter and Telecom Power Supplies
  • EV Battery Chargers
  • High voltage DC/DC converters
  • Energy Storage Systems
  • Solar Inverters

Key Attributes Value Search Similar
Voltage (V) 650
Current (A) 47
Rds(on) (mΩ) 45
Configuration Single SiC MOSFET
Package Type TO-263-7L XL

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1:  $7.4300


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